Crystal truncation rods in kinematical and dynamical x-ray diffraction theories

Crystal truncation rods calculated in the kinematical approximation are shown to quantitatively agree with the sum of the diffracted waves obtained in the two-beam dynamical calculations for different reflections along the rod. The choice and the number of these reflections are specified. The agreement extends down to at least $\sim 10^{-7}$ of the peak intensity. For lower intensities, the accuracy of dynamical calculations is limited by truncation of the electron density at a mathematically planar surface, arising from the Fourier series expansion of the crystal polarizability

Effect of chiral interactions on the structure of Langmuir monolayers

Structural changes in monolayers of the enantiomer and the racemic mixture of 1-hexadecyl-glycerol with temperature and surface pressure variations are compared. On compression, both monolayers exhibit a variation of the tilt azimuth from the direction to the nearest neighbor to the next nearest neighbor. In the monolayer of the racemate, this variation occurs as a first order transition. In the monolayer of the enantiomer, the unit cell is oblique, and continuously passes from a state close to the low-pressure state of the racemate to a state close to its high-pressure state. The azimuths of the unit-cell distortion and that of the tilt remain almost equal to each other. The effect of chirality decreases when the temperature is increased. Structural changes are explained in detail within the framework of the Landau theory of phase transitions

Small-angle X-ray scattering from GaN nanowires on Si(111): facet truncation rods, facet roughness and Porod's law

Small-angle X-ray scattering from GaN nanowires grown on Si(111) is measured in the grazing-incidence geometry and modelled by means of a Monte Carlo simulation that takes into account the orientational distribution of the faceted nanowires and the roughness of their side facets. It is found that the scattering intensity at large wavevectors does not follow Porod's law I(q) ∝ q-4. The intensity depends on the orientation of the side facets with respect to the incident X-ray beam. It is maximum when the scattering vector is directed along a facet normal, reminiscent of surface truncation rod scattering. At large wavevectors q, the scattering intensity is reduced by surface roughness. A root-mean-square roughness of 0.9 nm, which is the height of just 3-4 atomic steps per micrometre-long facet, already gives rise to a strong intensity reduction. open access

Small-angle X-ray scattering from GaN nanowires on Si(111): facet truncation rods, facet roughness and Porod's law

Small-angle X-ray scattering from GaN nanowires grown on Si(111) is measured in the grazing-incidence geometry and modelled by means of a Monte Carlo simulation that takes into account the orientational distribution of the faceted nanowires and the roughness of their side facets. It is found that the scattering intensity at large wavevectors does not follow Porod's law I(q) ∝ q-4. The intensity depends on the orientation of the side facets with respect to the incident X-ray beam. It is maximum when the scattering vector is directed along a facet normal, reminiscent of surface truncation rod scattering. At large wavevectors q, the scattering intensity is reduced by surface roughness. A root-mean-square roughness of 0.9 nm, which is the height of just 3-4 atomic steps per micrometre-long facet, already gives rise to a strong intensity reduction. open acces

Chiral and herringbone symmetry breaking in water-surface monolayers

We report the observation from monolayers of eicosanoic acid in the L′2 phase of three distinct out-of-plane first-order diffraction peaks, indicating molecular tilt in a nonsymmetry direction and hence the absence of mirror symmetry. At lower pressures the molecules tilt in the direction of their nearest neighbors. In this region we find a structural transition, which we tentatively identify as the rotator-herringbone transition L2d−L2h

Thermal roughening of an SOS-model with elastic interaction

We analyze the effects of a long-ranged step-step interaction on thermal roughening within the framework of a solid-on-solid model of a crystal surface by means of Monte Carlo simulation. A repulsive step-step interaction is modeled by elastic dipoles located on sites adjacent to the steps. In order to reduce the computational effort involved in calculating interaction energy based on long-ranged potentials, we employ a multi-grid scheme. As a result of the long-range character of the step interaction, the roughening temperature increases drastically compared to a system with short-range cutoff as a consequence of anti-correlations between surface defects

X-ray diffraction peak profiles from threading dislocations in GaN epitaxial films

We analyze the lineshape of x-ray diffraction profiles of GaN epitaxial layers with large densities of randomly distributed threading dislocations. The peaks are Gaussian only in the central, most intense part of the peak, while the tails obey a power law. The $q^{-3}$ decay typical for random dislocations is observed in double-crystal rocking curves. The entire profile is well fitted by a restricted random dislocation distribution. The densities of both edge and screw threading dislocations and the ranges of dislocation correlations are obtained

X-ray scattering study of GaN nanowires grown on Ti/Al2_{2}O3_{3} by molecular beam epitaxy

GaN nanowires (NWs) grown by molecular beam epitaxy on Ti films sputtered on Al$_{2}$O$_{3}$ are studied by X-ray diffraction (XRD) and grazing incidence small-angle X-ray scattering (GISAXS). XRD, performed both in symmetric Bragg reflection and at grazing incidence, reveals Ti, Ti$_{3}$O, Ti$_{3}$Al, and TiO$_x$N$_y$ crystallites with in-plane and out-of-plane lattice parameters intermediate between those of Al$_{2}$O$_{3}$ and GaN. These topotaxial crystallites in Ti film, formed due to interfacial reactions and N exposure, possess fairly little misorientation with respect to Al$_{2}$O$_{3}$. As a result, GaN NWs grow on the top TiN layer possessing a high degree of epitaxial orientation with respect to the substrate. The measured GISAXS intensity distributions are modeled by the Monte Carlo method taking into account the orientational distributions of NWs, a variety of their cross-sectional shapes and sizes, and roughness of their side facets. The cross-sectional size distributions of the NWs and the relative fractions of $(1\bar{1}00)$ and $(11\bar{2}0)$ side facets are determined